Semiconductor device and fabrication method are provided. The method includes a base substrate including a first region, a second region, and a third region arranged in a first direction; a first doped layer at the first region and a second doped layer at the third region; a first gate structure at the second region; a first dielectric layer on the base substrate; forming first trenches in the first dielectric layer, where the first trenches include second sub-regions arranged in a direction in parallel with a second direction, and a minimum distance between a second sub-region and a contact region of the first gate structure is greater than zero; forming a first conductive layer in the first trenches; forming a second conductive layer on a surface of the first conductive layer at the second sub-regions; and forming a third conductive layer on the contact region of the first gate structure.