Invention Grant
- Patent Title: Semiconductor storage device and method for manufacturing semiconductor storage device
-
Application No.: US16561521Application Date: 2019-09-05
-
Publication No.: US11037948B2Publication Date: 2021-06-15
- Inventor: Sonoe Matsushita , Takahito Nishimura , Kazuyuki Yoshimochi , Yoshihiro Yanai , Satoshi Usui
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-044919 20190312
- Main IPC: H01L27/11565
- IPC: H01L27/11565 ; H01L27/11582 ; H01L23/522 ; H01L21/311
Abstract:
A semiconductor storage device according to one embodiment is the semiconductor storage device that includes: a cell array region having a plurality of memory cells; and an outer edge portion arranged at an end portion to surround the cell array region. A stacked body in which a plurality of conductive layers are stacked via a first insulating layer and which has a stair portion in which end portions of the plurality of conductive layers form a stair shape is provided inside the cell array region, the stair portion facing the outer edge portion. A center of at least one step of the stair portion has a recess directed to an inner side of the cell array region.
Public/Granted literature
- US20200295022A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2020-09-17
Information query
IPC分类:
