Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
-
Application No.: US16432629Application Date: 2019-06-05
-
Publication No.: US11037953B2Publication Date: 2021-06-15
- Inventor: Sung Bo Shim , Jung Dal Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2017-0056984 20170504
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/06 ; H01L27/12 ; G11C16/16 ; H01L21/822 ; G11C16/34 ; H01L23/00 ; G11C16/30 ; H01L27/11565 ; H01L27/1157 ; H01L27/11573 ; H01L27/11575 ; H01L23/60 ; G11C5/02 ; H01L21/8234
Abstract:
Provided herein may be a semiconductor device. The semiconductor device may include a first substrate, a second substrate disposed on the first substrate, a stack which is disposed on the second substrate and includes stacked memory cells, and a discharge contact structure electrically coupling the second substrate with the first substrate such that charges in the second substrate are discharged to the first substrate.
Public/Granted literature
- US20190288003A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-09-19
Information query
IPC分类:
