An imaging element has at least a photoelectric conversion section, a first transistor TR1, and a second transistor TR2, the photoelectric conversion section includes a photoelectric conversion layer, a first electrode, and a second electrode, the imaging element further has a first photoelectric conversion layer extension section, a third electrode, and a fourth electrode, the first transistor TR1 includes the second electrode that functions as one source/drain section, the third electrode that functions as a gate section, and the first photoelectric conversion layer extension section that functions as the other source/drain section, and the first transistor TR1 (TRrst) is provided adjacent to the photoelectric conversion section.