Invention Grant
- Patent Title: Semiconductor structure with enlarged gate electrode structure and method for forming the same
-
Application No.: US16197258Application Date: 2018-11-20
-
Publication No.: US11038035B2Publication Date: 2021-06-15
- Inventor: Bo-Wen Hsieh , Wen-Jia Hsieh , Yi-Chun Lo , Mi-Hua Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/40 ; H01L29/49
Abstract:
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.
Public/Granted literature
- US20190109198A1 SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2019-04-11
Information query
IPC分类:
