Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16261078Application Date: 2019-01-29
-
Publication No.: US11038045B2Publication Date: 2021-06-15
- Inventor: Toshihiro Ohki
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JPJP2018-044442 20180312
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/06
Abstract:
A semiconductor device includes a back barrier layer formed over a substrate, a first electron transit layer formed over the back barrier layer, an opening formed in the first electron transit layer and the back barrier layer, a second electron transit layer formed over the first electron transit layer, a side surface of the first electron transit layer at a side surface within the opening, a side surface of the back barrier layer at a side surface within the opening, and a surface of the back barrier layer at a bottom surface within the opening, an electron supply layer formed over the second electron transit layer, a drain electrode formed over the electron supply layer within the opening, and a gate electrode formed to cover a side surface of the electron supply layer at a side surface within the opening from an edge part of the opening.
Public/Granted literature
- US20190280110A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-09-12
Information query
IPC分类:
