Invention Grant
- Patent Title: Fin-based devices based on the thermoelectric effect
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Application No.: US16448544Application Date: 2019-06-21
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Publication No.: US11038092B2Publication Date: 2021-06-15
- Inventor: Philipp Steinmann , Puneet H. Suvarna
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L35/32
- IPC: H01L35/32 ; H01L35/22 ; H01L35/34 ; H01L27/105
Abstract:
Structures that include semiconductor fins and methods for forming a structure that includes semiconductor fins. A first fin comprised of n-type semiconductor material and a second fin comprised of p-type semiconductor material are formed. A conductive strap is formed that couples an end of the first fin with an end of the second fin.
Public/Granted literature
- US20190319180A1 FIN-BASED DEVICES BASED ON THE THERMOELECTRIC EFFECT Public/Granted day:2019-10-17
Information query
IPC分类:
