Invention Grant
- Patent Title: Tris(disilanyl)amine
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Application No.: US15776851Application Date: 2016-12-16
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Publication No.: US11040989B2Publication Date: 2021-06-22
- Inventor: Brian D. Rekken , Xiaobing Zhou , Byung K. Hwang , Barry Ketola
- Applicant: Jiangsu Nata Opto-Electronic Materials Co. Ltd.
- Applicant Address: CN Jiangsu
- Assignee: Jiangsu Nata Opto-Electronic Materials Co. Ltd.
- Current Assignee: Jiangsu Nata Opto-Electronic Materials Co. Ltd.
- Current Assignee Address: CN Jiangsu
- Agency: Morgan, Lewis & Bockius LLP
- International Application: PCT/US2016/067075 WO 20161216
- International Announcement: WO2017/106587 WO 20170622
- Main IPC: C07F7/10
- IPC: C07F7/10 ; C07F7/20 ; C07F7/02 ; B01J31/14 ; C01B21/087 ; C01B33/027 ; C08G77/62 ; C23C16/455 ; H01L21/02 ; C07F7/08 ; C23C16/34
Abstract:
A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.
Public/Granted literature
- US20180334469A1 TRIS(DISILANYL)AMINE Public/Granted day:2018-11-22
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