Invention Grant
- Patent Title: Quantum dots preparation method and quantum dots
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Application No.: US16326212Application Date: 2019-01-17
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Publication No.: US11041121B2Publication Date: 2021-06-22
- Inventor: Xu Chen
- Applicant: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Hubei
- Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Hubei
- Agent Mark M. Friedman
- International Application: PCT/CN2019/072109 WO 20190117
- International Announcement: WO2020/077905 WO 20200423
- Main IPC: C09K11/66
- IPC: C09K11/66 ; C09K11/02 ; B82Y40/00

Abstract:
A method of preparing quantum dots and the quantum dots are provided. The quantum dots are doped with manganese ions and various kinds of halogen ions such that when the quantum dots emit light, they will have a dual luminescence system, one is intrinsic luminescence of perovskite quantum dots and the other is doping luminescence of the manganese ions. The intrinsic luminescence of perovskite is adjustable from 410 nm to 520 nm based on the ratio of the amounts of different substances having various halide ions, which increases the wavelength range of a quantum dot luminescence spectrum so that the application scenario of the quantum dots is wider.
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