Invention Grant
- Patent Title: Gas shower head with plural hole patterns and with corresponding different plural hole densities and film formation method
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Application No.: US16735044Application Date: 2020-01-06
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Publication No.: US11041242B2Publication Date: 2021-06-22
- Inventor: Chih-Hui Huang , Sheng-Chan Li , Cheng-Hsien Chou , Cheng-Yuan Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C. INTELLECTUAL PROPERTY ATTORNEYS
- Agent Anthony King
- Main IPC: H01L21/687
- IPC: H01L21/687 ; C23C16/455 ; H01L23/00 ; C23C16/458 ; H01L21/02
Abstract:
A gas shower head includes a plate, a plurality of central holes disposed in a central region of the plate, and a plurality of peripheral holes disposed in a peripheral region of the plate. The central holes are configured to form a first portion of a material film, and the peripheral holes are configured to form a second portion of the material film. A hole density in the peripheral region is greater than a hole density in the central region. The first portion of the material film includes a first thickness corresponding to the hole density in central region, and the second portion of the material film includes a second thickness corresponding to the hole density in peripheral region and greater than the first thickness.
Information query
IPC分类:
