The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. The silicon carbide substrate (100) comprises a main surface (102) and a circumferential end face surface (114) which is essentially perpendicular to the main surface (102), and a chamfered peripheral region (110), wherein a first bevel surface (106) of the chamfered peripheral region (110) includes a first bevel angle (a1) with said main surface (102), and wherein a second bevel surface (108) of the chamfered peripheral region (110) includes a second bevel angle (a2) with said end face surface (114), wherein, in more than 75% of the peripheral region, said first bevel angle (a1) has a value in a range between 20° and 50°, and said second bevel angle (a2) has a value in a range between 45° and 75°.