Invention Grant
- Patent Title: Chopped bias magnetic field solid-state spin sensor for low frequency measurements of physical quantities
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Application No.: US16106802Application Date: 2018-08-21
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Publication No.: US11041916B2Publication Date: 2021-06-22
- Inventor: Linh M. Pham , Erik M. Thompson , John F. Barry , Kerry A. Johnson , Danielle A. Braje
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Smith Baluch LLP
- Main IPC: G01R33/00
- IPC: G01R33/00 ; G01R33/26

Abstract:
Applying a bias magnetic field to a solid-state spin sensor enables vector magnetic field measurements with the solid-state spin sensor. Unfortunately, if the bias magnetic field drifts slowly, it creates noise that confounds low-frequency field measurements. Fortunately, the undesired slow drift of the magnitude of the bias magnetic field can be removed, nullified, or cancelled by reversing the direction (polarity) of the bias magnetic field at known intervals. This makes the resulting solid-state spin sensor system suitable for detecting low-frequency (mHz, for example) changes in magnetic field or other physical parameters.
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