The present invention relates to a composition comprising; components a. c. and d; and optional component b. wherein, component a. is a metal compound having the structure (I), optional component b., is a polyol additive, having structure (VI), component c. is a high performance polymer additive, and component d. is a solvent. The present invention further relates to using this compositions in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.