Invention Grant
- Patent Title: Photoetching apparatus and method
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Application No.: US16494120Application Date: 2018-03-13
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Publication No.: US11042099B2Publication Date: 2021-06-22
- Inventor: Chang Zhou , Zhiyong Yang , Linlin Ma
- Applicant: SHANGHAI MICRO ELECTRONICS EQUIPMENT (GROUP) CO., LTD.
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI MICRO ELECTRONICS EQUIPMENT (GROUP) CO., LTD.
- Current Assignee: SHANGHAI MICRO ELECTRONICS EQUIPMENT (GROUP) CO., LTD.
- Current Assignee Address: CN Shanghai
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN201710154356.4 20170315
- International Application: PCT/CN2018/078829 WO 20180313
- International Announcement: WO2018/166444 WO 20180920
- Main IPC: G03B27/42
- IPC: G03B27/42 ; G03F7/20 ; G03F9/00

Abstract:
The lithography apparatus includes at least two exposure devices and one substrate device. The substrate device includes a substrate stage and a substrate supported by the substrate stage. The at least two exposure devices are disposed in symmetry to each other above the substrate with respect to a direction for scanning exposure and configured to simultaneously create two exposure fields onto the substrate to expose the portions of the substrate within the exposure fields.
Public/Granted literature
- US20200257207A1 PHOTOETCHING APPARATUS AND METHOD Public/Granted day:2020-08-13
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