Invention Grant
- Patent Title: Spin transfer torque oscillator (STO) with spin torque injection to a flux generating layer (FGL) from two sides
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Application No.: US16546387Application Date: 2019-08-21
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Publication No.: US11043234B2Publication Date: 2021-06-22
- Inventor: Yan Wu
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/235
- IPC: G11B5/235 ; G11B5/31 ; G11B5/127 ; G11B5/11 ; G11B5/48 ; G11B5/193 ; G11B5/00

Abstract:
A spin torque reversal assisted magnetic recording (STRAMR) structure is disclosed wherein a spin torque oscillator (STO) is formed in the write gap (WG) and generates one or both of a radio frequency (RF) field on a magnetic bit to lower the required write field during a write process, and a spin torque on a field generation layer (FGL) in the STO that flips a FGL magnetization to a direction opposing the WG field thereby increasing reluctance in the WG and causing larger write field output from the main pole (MP). The FGL is between two spin preserving layers that each conduct spin polarized current from an adjoining spin polarization (SP) layer. Current is applied from the MP and trailing shield to the SP layers, and returns to a direct current source through a lead from the FGL. STO sidewalls are self-aligned to a MP tip upper portion.
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