Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US16848356Application Date: 2020-04-14
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Publication No.: US11043376B2Publication Date: 2021-06-22
- Inventor: Sheng-Ting Fan , Pin-Shiang Chen , Chee Wee Liu , Chi-Wen Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd. , National Taiwan University
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.,National Taiwan University
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.,National Taiwan University
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L29/24 ; H01L29/78 ; H01L29/66 ; H01L29/786
Abstract:
A transistor based on topological insulators is provided. In an embodiment a topological insulator is used to form both the channel as well as the source/drain regions, wherein the channel has a first thickness such that the topological insulator material has properties of a semiconductor material and the source/drain regions have a second thickness such that the topological insulator has properties of a conductive material.
Public/Granted literature
- US20200243327A1 Semiconductor Device and Method Public/Granted day:2020-07-30
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