Invention Grant
- Patent Title: Etching method and etching processing apparatus
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Application No.: US16106545Application Date: 2018-08-21
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Publication No.: US11043391B2Publication Date: 2021-06-22
- Inventor: Yusuke Saitoh
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JPJP2017-160546 20170823
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/311 ; H01L27/11529 ; H01L27/11573 ; H01L21/768 ; H01L21/67 ; H01L27/12 ; H01L27/11575 ; H01J37/32 ; H01L27/11582 ; H01L27/11524 ; H01L27/1157 ; H01L27/11556
Abstract:
A method of etching silicon-containing film formed on an electrode layer of a floating potential is provided. The etching is performed in a processing vessel while supplying gas, a first high frequency electric power of a first frequency, and a second high frequency electric power of a second frequency less than the first frequency. The method includes a step of supplying, during etching of the silicon-containing film, the first high frequency electric power as a continuous wave and the second high frequency electric power as a pulse wave having a duty cycle of 20% or less, upon a distance from the electrode layer to a bottom of an etching pattern formed on the silicon-containing film becoming not more than a predetermined distance.
Public/Granted literature
- US20190067030A1 ETCHING METHOD AND ETCHING PROCESSING APPARATUS Public/Granted day:2019-02-28
Information query
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