Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
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Application No.: US16298241Application Date: 2019-03-11
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Publication No.: US11043392B2Publication Date: 2021-06-22
- Inventor: Kotaro Murakami , Naoharu Nakaiso , Tetsuya Takahashi , Atsushi Moriya
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JPJP2018-044378 20180312
- Main IPC: H01L21/311
- IPC: H01L21/311 ; C23C16/52 ; C23C16/44 ; H01L21/02 ; H01L21/3213 ; H01L21/3205
Abstract:
There is provided a technique that includes partially etching a film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) setting a temperature of the substrate having the first film formed on the surface to a first temperature; (b) stabilizing an in-plane temperature of the substrate at the first temperature; and (c) lowering the temperature of the substrate having the in-plane temperature stabilized at the first temperature from the first temperature to a second temperature that is lower than the first temperature, wherein in (c), an etching gas is supplied to the substrate for a predetermined period.
Public/Granted literature
- US20190279877A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM Public/Granted day:2019-09-12
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