Invention Grant
- Patent Title: Methods for processing semiconductor wafers having a polycrystalline finish
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Application No.: US15764272Application Date: 2016-09-29
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Publication No.: US11043395B2Publication Date: 2021-06-22
- Inventor: Alexis Grabbe , Hui Wang , Alex Chu
- Applicant: SunEdison Semiconductor Limited (UEN201334164H)
- Applicant Address: SG Singapore
- Assignee: SunEdison Semiconductor Limited (UEN201334164H)
- Current Assignee: SunEdison Semiconductor Limited (UEN201334164H)
- Current Assignee Address: SG Singapore
- Agency: Armstrong Teasdale LLP
- International Application: PCT/US2016/054488 WO 20160929
- International Announcement: WO2017/059099 WO 20170406
- Main IPC: H01L21/321
- IPC: H01L21/321 ; C09G1/02 ; H01L21/02

Abstract:
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. A first slurry is applied to the semiconductor wafer and the silicon layer is polished to smooth the silicon layer. A second slurry is applied to the semiconductor wafer. The second slurry includes a greater amount of a caustic agent than the first slurry.
Public/Granted literature
- US20180323079A1 METHODS FOR PROCESSING SEMICONDUCTOR WAFERS HAVING A POLYCRYSTALLINE FINISH Public/Granted day:2018-11-08
Information query
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