Invention Grant
- Patent Title: Method of forming a pattern and method of manufacturing a semiconductor device using the same
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Application No.: US16509792Application Date: 2019-07-12
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Publication No.: US11043397B2Publication Date: 2021-06-22
- Inventor: Myeong-Dong Lee , Min-Su Choi , Jun-Hyeok Ahn , Sung-Hee Han , Ce-Ra Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2019-0001697 20190107
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L27/108 ; H01L21/033

Abstract:
First and second mask layers are formed on a target layer. The second mask layer is patterned to form second mask patterns each of which having a rhomboid shape with a first diagonal length and a second diagonal length. A trimming process is performed on the second mask patterns to form second masks by etch. First portions of first opposite vertices of each second mask pattern are etched more than second portions of second opposite vertices of each second mask pattern. A first diagonal length between the first opposite vertices is greater than a second diagonal length between the second opposite vertices. The first mask layer is patterned to form first masks by etching the first mask layer using the second masks as an etching mask. The target layer is patterned to form target patterns by etching the target layer using the first masks as an etching mask.
Public/Granted literature
- US20200219732A1 METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2020-07-09
Information query
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