Invention Grant
- Patent Title: Gradient atomic layer deposition
-
Application No.: US16878841Application Date: 2020-05-20
-
Publication No.: US11043416B2Publication Date: 2021-06-22
- Inventor: Chia-Pang Kuo , Ya-Lien Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/285 ; H01L23/532
Abstract:
A method for forming a semiconductor device includes forming a barrier layer over a dielectric layer, a concentration of an impurity in the barrier layer increasing as the barrier layer extends away from the dielectric layer; and performing a plasma process to treat the barrier layer.
Public/Granted literature
- US20200279771A1 GRADIENT ATOMIC LAYER DEPOSITION Public/Granted day:2020-09-03
Information query
IPC分类:
