Invention Grant
- Patent Title: Line structure for fan-out circuit and manufacturing method thereof, and photomask pattern for fan-out circuit
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Application No.: US16439499Application Date: 2019-06-12
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Publication No.: US11043417B2Publication Date: 2021-06-22
- Inventor: Wei-Hung Wang , Chih-Hao Huang
- Applicant: MACRONIX International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/027 ; H01L23/482 ; H01L23/528
Abstract:
A line structure for fan-out circuit having a dense-line area and a fan-out area is provided. The line structure includes a plurality of dense lines arranged in the dense-line area parallel to a first direction, a plurality of pads disposed in the fan-out area, and a plurality of connecting lines arranged in the fan-out area parallel to a second direction. The connecting lines respectively connect one of the dense lines with one of the pads, wherein at least one of the connecting lines is a wavy line.
Information query
IPC分类:
