Invention Grant
- Patent Title: Semiconductor die with hybrid wire bond pads
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Application No.: US16876394Application Date: 2020-05-18
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Publication No.: US11043435B1Publication Date: 2021-06-22
- Inventor: Lin Chen , Gang Zhao , Wei Jiang , Shiann-Ming Liou
- Applicant: Innogrit Technologies Co., Ltd.
- Applicant Address: CN Shanghai
- Assignee: Innogrit Technologies Co., Ltd.
- Current Assignee: Innogrit Technologies Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: IPro, PLLC
- Agent Xiaomin Huang
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/00

Abstract:
Apparatus and methods are provided for bond bads layout and structure of semiconductor dies. According to various aspects of the subject innovation, the provided techniques may provide a semiconductor die that may comprise an outer bond pad elongated in a first direction parallel to an edge of the semiconductor die and an inner bond pad elongated in a second direction perpendicular to the edge of the semiconductor die. The outer bond pad may have a probing area and two wire bond areas aligned in the first direction and the inner bond pad may have one probing area and one wire bond area aligned in the second direction. The outer bond pad may be positioned closer to the edge of the semiconductor die than the inner bond pad.
Information query
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