Invention Grant
- Patent Title: Power converter monolithically integrating transistors, carrier, and components
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Application No.: US16027031Application Date: 2018-07-03
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Publication No.: US11043477B2Publication Date: 2021-06-22
- Inventor: Jonathan Almeria Noquil , Osvaldo Jorge Lopez , Haian Lin
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L23/24
- IPC: H01L23/24 ; H01L25/16 ; H01L23/00 ; H01L23/31 ; H01L23/498 ; H01L21/56 ; H02M3/155 ; H01L23/48 ; H01L21/768 ; H02M3/158
Abstract:
A power converter (100) comprising a semiconductor chip (101) with a first (101a) and a parallel second (101b) surface, and through-silicon vias (TSVs, 110). The chip embedding a high-side (HS) field-effect transistor (FET) interconnected with a low side (LS) FET. Surface (101a) includes first metallic pads (111) as inlets of the TSVs, and an attachment site for an integrated circuit (IC) chip (150). Surface (101b) includes second metallic pads (115) as outlets of the TSVs, and third metallic pads as terminals of the converter: Pad (123a) as HS FET inlet, pad (122a) as HS FET gate, pad (131a) as LS FET outlet, pad (132a) as LS FET gate, and gate (140a) as common HS FET and LS FET switch-node. Driver-and-controller IC chip 150) has the IC terminals connected to respective first pads.
Public/Granted literature
- US20180331083A1 Power Converter Monolithically Integrating Transistors, Carrier, and Components Public/Granted day:2018-11-15
Information query
IPC分类:
