Invention Grant
- Patent Title: ESD protection circuit, semiconductor system including same, and method for operating same
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Application No.: US16527783Application Date: 2019-07-31
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Publication No.: US11043487B2Publication Date: 2021-06-22
- Inventor: Wan-Yen Lin , Bo-Ting Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02

Abstract:
An electrostatic discharge (ESD) protection circuit (for a protected device in a semiconductor system, the protected device being coupled between a first node and a first reference voltage) includes: an ESD device coupled between the first node and the first reference voltage; a logic block including a first input and an output, the first input being coupled to a second reference voltage, and the output being coupled to an input of the ESD device and a feedback control circuit coupled between the first node and a second input of the logic block.
Public/Granted literature
- US20200075580A1 ESD PROTECTION CIRCUIT, SEMICONDUCTOR SYSTEM INCLUDING SAME, AND METHOD FOR OPERATING SAME Public/Granted day:2020-03-05
Information query
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