Invention Grant
- Patent Title: Embedded SRAM and methods of forming the same
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Application No.: US16673643Application Date: 2019-11-04
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Publication No.: US11043501B2Publication Date: 2021-06-22
- Inventor: Jhon Jhy Liaw
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L29/32 ; G11C11/42 ; H01L29/78 ; H01L29/66 ; H01L27/088 ; H01L21/265 ; H01L21/266 ; H01L21/324 ; H01L21/762 ; H01L29/06 ; H01L29/08 ; H01L29/16 ; H01L29/161 ; H01L29/167 ; G11C11/412
Abstract:
A chip includes a semiconductor substrate, and a first N-type Metal Oxide Semiconductor Field Effect Transistor (NMOSFET) at a surface of the semiconductor substrate. The first NMOSFET includes a gate stack over the semiconductor substrate, a source/drain region adjacent to the gate stack, and a dislocation plane having a portion in the source/drain region. The chip further includes a second NMOSFET at the surface of the semiconductor substrate, wherein the second NMOSFET is free from dislocation planes.
Public/Granted literature
- US20200066735A1 Embedded SRAM and Methods of Forming the Same Public/Granted day:2020-02-27
Information query
IPC分类:
