Invention Grant
- Patent Title: Semiconductor crystal substrate, infrared detector, method for producing semiconductor crystal substrate, and method for producing infrared detector
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Application No.: US16892615Application Date: 2020-06-04
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Publication No.: US11043517B2Publication Date: 2021-06-22
- Inventor: Shigekazu Okumura , Shuichi Tomabechi , Ryo Suzuki
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JPJP2016-116470 20160610
- Main IPC: H01L31/0304
- IPC: H01L31/0304 ; H01L27/144 ; H01L21/02 ; H01L31/0352 ; H01L31/18
Abstract:
A semiconductor crystal substrate includes a crystal substrate that is formed of a material including one of GaSb and InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb. The first buffer layer has a p-type conductivity, and the second buffer layer has an n-type conductivity.
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