Invention Grant
- Patent Title: High-resistance memory devices
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Application No.: US15404926Application Date: 2017-01-12
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Publication No.: US11043535B2Publication Date: 2021-06-22
- Inventor: Takashi Ando , Marwan H. Khater , Seyoung Kim , Hiroyuki Miyazoe , Vijay Narayanan
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Randall Bluestone
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
Cross bar array devices and methods of forming the same include first electrodes arranged adjacent to each other and extending in a first direction. Second electrodes are arranged transversely to the first electrodes. An electrolyte layer is disposed between the first electrodes and the second electrodes, the electrolyte layer comprising a nitridated dielectric material.
Public/Granted literature
- US20180197917A1 HIGH-RESISTANCE MEMORY DEVICES Public/Granted day:2018-07-12
Information query
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