Invention Grant
- Patent Title: Semiconductor devices and methods for fabricating the same
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Application No.: US15918578Application Date: 2018-03-12
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Publication No.: US11043563B2Publication Date: 2021-06-22
- Inventor: Hsin-Chih Lin , Chang-Xiang Hung , Chia-Ching Huang , Yung-Hao Lin , Chia-Hao Lee
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/20 ; H01L29/778 ; H01L29/66 ; H01L29/417 ; H01L29/205

Abstract:
A semiconductor device includes a compound semiconductor layer disposed on a substrate, a protection layer disposed on the compound semiconductor layer, and a source electrode, a drain electrode and a gate electrode penetrating the protection layer and on the compound semiconductor layer, wherein the gate electrode is disposed between the source electrode and the drain electrode. The semiconductor device also includes a plurality of field plates disposed over the protection layer and between the gate electrode and the drain electrode, wherein the plurality of field plates are separated from each other. A method for fabricating the semiconductor device is also provided.
Public/Granted literature
- US20190280092A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2019-09-12
Information query
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