Invention Grant
- Patent Title: Integrated circuit devices including transistors having variable channel pitches
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Application No.: US16520717Application Date: 2019-07-24
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Publication No.: US11043564B2Publication Date: 2021-06-22
- Inventor: Jung Ho Do , Seung Hyun Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L27/02 ; H01L29/78 ; H01L27/088

Abstract:
Integrated circuit devices may include active regions spaced apart from each other in a direction. The active regions may include a first pair of active regions, a second pair of active regions, and a third pair of active regions. The first pair of active regions may be spaced apart from each other by a first distance in the direction, the second pair of active regions may be spaced apart from each other by the first distance in the direction, and the third pair of active regions may be spaced apart from each other by the first distance in the direction. The second pair of active regions may be spaced apart from the first pair of active regions and the third pair of active regions by a second distance in the direction, and the first distance may be shorter than the second distance.
Public/Granted literature
- US20200295146A1 INTEGRATED CIRCUIT DEVICES INCLUDING TRANSISTORS HAVING VARIABLE CHANNEL PITCHES Public/Granted day:2020-09-17
Information query
IPC分类: