Invention Grant
- Patent Title: Field-effect transistor and fabrication method of field-effect transistor
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Application No.: US16417544Application Date: 2019-05-20
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Publication No.: US11043575B2Publication Date: 2021-06-22
- Inventor: Xiaolong Ma , Riqing Zhang , Stephane Badel
- Applicant: HUAWEI TECHNOLOGIES CO., LTD.
- Applicant Address: CN Guangdong
- Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Guangdong
- Agency: Womble Bond Dickinson (US) LLP
- Priority: CN201611022835.2 20161121
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L29/06 ; B82Y10/00 ; H01L29/76

Abstract:
The invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove,; and forming a source and a drain in a preset source drain area along the gate length direction.
Public/Granted literature
- US20190280104A1 FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD OF FIELD-EFFECT TRANSISTOR Public/Granted day:2019-09-12
Information query
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