Invention Grant
- Patent Title: Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
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Application No.: US16797643Application Date: 2020-02-21
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Publication No.: US11043586B2Publication Date: 2021-06-22
- Inventor: Shinya Kyogoku , Ryosuke Iijima , Shinichi Kimoto , Katsuhisa Tanaka
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-167648 20190913
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/04 ; H01L29/66 ; H01L29/16
Abstract:
A semiconductor device according to an embodiment includes: a SiC layer having a first plane and a second plane facing the first plane, the SiC layer including a first trench on a first plane side, an n-type first SiC region, a p-type second SiC region, an n-type third SiC region located in this order from the second plane to the first plane, a p-type fourth SiC region between the first SiC region and the first trench, a fifth SiC region between the first SiC region and the first plane, and a sixth SiC region between the fourth SiC region and the fifth SiC region, and the sixth SiC region having an n-type impurity concentration higher than an n-type impurity concentration of the first SiC region; a gate electrode in the first trench; a first electrode on the first plane side; and a second electrode on a second plane side.
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