An anti-ferromagnetic (AFM) voltage-controlled field effect logic device structure can include an AFM material that extends in a first direction and an input voltage terminal that extends opposite the AFM material. An oxide material can be located between the AFM material and the input voltage terminal. A first spin orbital coupling (SOC) material can extend in a second direction across the AFM material to provide a first SOC channel with a drain voltage terminal at a first end of the first SOC channel and an output voltage terminal at a second end of the first SOC channel that is opposite the first end. A contact can be electrically coupled to the output voltage terminal and configured to electrically couple to a second SOC material extending in the second direction spaced apart from the first SOC material to provide a second SOC channel.