Invention Grant
- Patent Title: Semiconductor device and method for producing same
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Application No.: US16493803Application Date: 2018-03-08
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Publication No.: US11043599B2Publication Date: 2021-06-22
- Inventor: Setsuji Nishimiya , Tohru Daitoh , Masahiko Suzuki , Kengo Hara , Hajime Imai , Toshikatsu Itoh , Hideki Kitagawa , Tetsuo Kikuchi , Teruyuki Ueda
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Sakai
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Sakai
- Agency: Keating & Bennett, LLP
- Priority: JPJP2017-048925 20170314
- International Application: PCT/JP2018/008971 WO 20180308
- International Announcement: WO2018/168369 WO 20180920
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/786 ; H01L21/02 ; H01L21/467 ; H01L21/477 ; H01L29/24 ; H01L29/66

Abstract:
A semiconductor device (100) includes a TFT (10) supported on a substrate (11), wherein the TFT (10) includes a gate electrode (12g), a gate insulating layer (14) that covers the gate electrode (12g), and an oxide semiconductor layer (16) that is formed on the gate insulating layer (14). The oxide semiconductor layer 16 has a layered structure including a first oxide semiconductor layer (16a) in contact with the gate insulating layer (14) and a second oxide semiconductor layer (16b) layered on the first oxide semiconductor layer (16a). The first oxide semiconductor layer (16a) and the second oxide semiconductor layer (16b) both include In, Ga and Zn; an In atomic ratio of the first oxide semiconductor layer (16a) is greater than a Zn atomic ratio thereof, and an In atomic ratio of the second oxide semiconductor layer (16b) is smaller than a Zn atomic ratio thereof; and the oxide semiconductor layer (16) has a side surface of a forward tapered shape.
Public/Granted literature
- US20210036158A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME Public/Granted day:2021-02-04
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