Invention Grant
- Patent Title: Light emitting diodes using ultra-thin quantum heterostructures
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Application No.: US16192325Application Date: 2018-11-15
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Publication No.: US11043612B2Publication Date: 2021-06-22
- Inventor: SM Islam , Vladimir Protasenko , Huili Grace Xing , Debdeep Jena , Jai Verma
- Applicant: Cornell University , University of Notre Dame du Lac
- Applicant Address: US NY Ithaca; US IN Notre Dame
- Assignee: Cornell University,University of Notre Dame du Lac
- Current Assignee: Cornell University,University of Notre Dame du Lac
- Current Assignee Address: US NY Ithaca; US IN Notre Dame
- Agency: Culhane Meadows PLLC
- Agent Orlando Lopez
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/14 ; H01L33/00 ; H01L33/02 ; H01L27/15 ; H01L33/06 ; H01L33/12 ; H01L33/30 ; H01L33/38

Abstract:
A DUV-LED including a bottom substrate, a n-contact/injection layer formed on the bottom substrate, a p-contact region, and an emitting active region between the n-contact/injection layer and the contact region. The emitting active region includes at least one GaN quantum heterostructure. The at least one GaN quantum heterostructures is sized and shaped to determine a certain emission wavelength. Preferably, the certain emission wavelength is in a range of approximately 219-280 nm. In one embodiment, the size is controlled by precisely controlling parameters selected from the group consisting of: an epitaxial deposition time; a Ga/N ratio; a thermal annealing time; a temperature during deposition; and combinations thereof.
Public/Granted literature
- US20190148584A1 LIGHT EMITTING DIODES USING ULTRA-THIN QUANTUM HETEROSTRUCTURES Public/Granted day:2019-05-16
Information query
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