- Patent Title: Light emitting diode device and method for manufacturing the same
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Application No.: US16456155Application Date: 2019-06-28
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Publication No.: US11043613B2Publication Date: 2021-06-22
- Inventor: Zhibai Zhong , Jinjian Zheng , Lixun Yang , Chia-En Lee , Chen-Ke Hsu , Junyong Kang
- Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Current Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Rosenberg, Klein & Lee
- Priority: CN201710057326.1 20170126
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L33/00 ; H01L33/24 ; H01L33/30 ; G02B3/02

Abstract:
A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.
Public/Granted literature
- US20190319172A1 LIGHT EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-10-17
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