Invention Grant
- Patent Title: Method of manufacturing a magnetoresistive device
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Application No.: US16695396Application Date: 2019-11-26
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Publication No.: US11043630B2Publication Date: 2021-06-22
- Inventor: Sanjeev Aggarwal , Sarin A. Deshpande
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Bookoff McAndrews, PLLC
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01L21/3065 ; H01L43/14

Abstract:
A magnetoresistive device may include an intermediate region positioned between a magnetically fixed region and a magnetically free region, and spin Hall channel region extending around a sidewall of at least the magnetically free region. An insulator region may extend around a portion of the sidewall such that the insulator region contacts a first portion of the sidewall and the spin Hall channel region contacts a second portion of the sidewall.
Public/Granted literature
- US20200176672A1 METHOD OF MANUFACTURING A MAGNETORESISTIVE DEVICE Public/Granted day:2020-06-04
Information query
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