Invention Grant
- Patent Title: Resistive memory device having a template layer
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Application No.: US17074016Application Date: 2020-10-19
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Publication No.: US11043633B2Publication Date: 2021-06-22
- Inventor: Seshubabu Desu
- Applicant: 4DS Memory, Limited
- Applicant Address: AU West Perth
- Assignee: 4DS Memory, Limited
- Current Assignee: 4DS Memory, Limited
- Current Assignee Address: AU West Perth
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00 ; G11C13/00
Abstract:
An electronic storage memory device is disclosed. The memory device includes a first conductive layer, and also includes a memory layer connected to the first conductive layer, where the memory layer has a variable resistance, and where no amorphous layer exists between the first conductive layer and the memory layer.
Public/Granted literature
- US20210036219A1 RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER Public/Granted day:2021-02-04
Information query
