Invention Grant
- Patent Title: Display panel with quantum dot thin film
-
Application No.: US16621243Application Date: 2019-11-12
-
Publication No.: US11043652B2Publication Date: 2021-06-22
- Inventor: Weijing Zeng
- Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicant Address: CN Guangdong
- Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee Address: CN Guangdong
- Agent Mark M. Friedman
- International Application: PCT/CN2019/117378 WO 20191112
- International Announcement: WO2021/027141 WO 20210218
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L27/32

Abstract:
The present invention provides a display panel including a light emitting diode structure. The light emitting diode structure includes an anode located on a thin film transistor layer, a light emitting material layer located on the anode, and a cathode covering the light emitting material layer. The light emitting diode structure further includes an anode reflective layer and a quantum dot thin film. The anode reflective layer is located under the anode, and is electrically insulated from the anode through a reflective insulation layer. The quantum dot thin film is located between the anode and the anode reflective layer.
Public/Granted literature
- US20210050551A1 DISPLAY PANEL Public/Granted day:2021-02-18
Information query
IPC分类: