- Patent Title: Method for GaN vertical microcavity surface emitting laser (VCSEL)
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Application No.: US15515302Application Date: 2015-09-30
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Publication No.: US11043792B2Publication Date: 2021-06-22
- Inventor: Jung Han , Cheng Zhang
- Applicant: Yale University
- Applicant Address: US CT New Haven
- Assignee: Yale University
- Current Assignee: Yale University
- Current Assignee Address: US CT New Haven
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2015/053254 WO 20150930
- International Announcement: WO2016/054232 WO 20160407
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/343 ; H01L33/16 ; H01L33/32 ; H01L33/10 ; H01S5/183 ; H01L21/3063 ; H01S5/10 ; H01S5/187 ; H01S5/30

Abstract:
Structures and methods for forming highly uniform and high-porosity gallium-nitride layers with sub-100-nm pore sizes are described. Electrochemical etching of heavily-doped gallium nitride at low bias voltages in concentrated nitric acid is used to form the porous gallium nitride. The porous layers may be used in reflective structures for integrated optical devices such as VCSELs and LEDs.
Public/Granted literature
- US20170237234A1 A METHOD FOR GAN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL) Public/Granted day:2017-08-17
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