Invention Grant
- Patent Title: Power amplifier
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Application No.: US16522866Application Date: 2019-07-26
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Publication No.: US11043919B2Publication Date: 2021-06-22
- Inventor: Toshihiko Yoshimasu , Tadamasa Murakami , Tsuyoshi Sugiura
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: JP2018-140536 20180726,KR10-2019-0047706 20190424
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/19 ; H03F3/21 ; G05F1/565

Abstract:
A power amplifier includes a first bias circuit including a first and third transistor, a first sub-bias circuit, and an amplifying circuit including a fourth transistor. In the first bias circuit, a second terminal of the first transistor and a second terminal of the first sub-bias circuit are grounded, a control terminal of the first transistor is connected to a control terminal of the first sub-bias circuit, a first terminal of the first sub-bias circuit is connected to a constant voltage terminal, a first terminal of the first transistor is connected to a second terminal of the third transistor, a first terminal of the third transistor is connected to a control terminal of the third transistor. The amplifying circuit amplifies an input signal power based on a first bias signal from the first bias circuit to a control terminal of the fourth transistor.
Public/Granted literature
- US20200036340A1 POWER AMPLIFIER Public/Granted day:2020-01-30
Information query
IPC分类: