Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16682061Application Date: 2019-11-13
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Publication No.: US11049860B2Publication Date: 2021-06-29
- Inventor: Byoung Deog Choi , Ji Woon Im
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2019-0063657 20190530
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/764 ; B82Y10/00 ; H01L49/02

Abstract:
A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; a first conductive pattern on the substrate; a second conductive pattern on the substrate and spaced apart from the first conductive pattern; an air spacer between the first conductive pattern and the second conductive pattern; and a quantum dot pattern covering an upper part of the air spacer.
Public/Granted literature
- US20200381435A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-12-03
Information query
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