Invention Grant
- Patent Title: Apparatuses including capacitor structures, and related memory devices, electronic systems, and methods
-
Application No.: US16416025Application Date: 2019-05-17
-
Publication No.: US11049864B2Publication Date: 2021-06-29
- Inventor: Mitsunari Sukekawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/108
- IPC: H01L27/108 ; G11C11/4074 ; H01L29/94 ; H01L49/02

Abstract:
An apparatus comprises first electrodes vertically extending through an isolation material, a second electrode horizontally intervening between two or more of the first electrodes laterally neighboring one another, and a dielectric structure horizontally and vertically intervening between the second electrode and the two or more of the first electrodes. Additional apparatuses, memory devices, electronic systems, and a method of forming an apparatus are also described.
Information query
IPC分类: