A method of producing a silicon single crystal, including pulling a silicon single crystal by Czochralski method while a magnetic field is applied to a raw material melt, including: setting a diameter on pulling the silicon single crystal to 300 mm or more, setting a growth axis direction of the silicon single crystal to , and growing the silicon single crystal so as to satisfy a relation of 1096/D−(0.134×M+80×R)/D>0.7, wherein D [mm] is the diameter on pulling the silicon single crystal, M [Gauss] is a central magnetic field strength at a surface of the raw material melt, and R [rpm] is a rotation rate of the silicon single crystal. This makes it possible to produce a crystal with favorable macroscopic RRG distribution and microscopic variation of resistivity.