Invention Grant
- Patent Title: Radiation-defect mitigation in InAs/GaSb strained-layer superlattice infrared detectors and related methods
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Application No.: US16260861Application Date: 2019-01-29
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Publication No.: US11054312B2Publication Date: 2021-07-06
- Inventor: Leonid Chernyak , Robert E. Peale , Christopher J. Fredricksen , Jonathan Lee
- Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
- Applicant Address: US FL Orlando
- Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
- Current Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
- Current Assignee Address: US FL Orlando
- Agency: Allen, Dyer, Doppelt + Gilchrist, PA
- Main IPC: G01J5/06
- IPC: G01J5/06 ; H01L31/02 ; H01L27/146 ; H01L31/0352 ; H01L31/18 ; H01L31/109 ; H01L31/0304 ; G01J5/24 ; G01J5/20 ; G01J5/00
Abstract:
An IR sensor device may include an IR image sensor having an array of IR sensing pixels, and a readout circuit coupled to the IR image sensor and configured to sense sequential images. The IR sensor device may include a controller coupled to the readout circuit and configured to cause the readout circuit to apply a voltage to the IR image sensor between sensing of the sequential images.
Public/Granted literature
Information query
