An example device for detecting acceleration using a spintronic Hall effect includes a spin Hall effect structure, a Magnetic Tunnel Junction (MTJ) element, a magnetic structure, and processing circuitry. The MTJ element includes a free structure, a pinned structure, and a tunnel barrier arranged between the free structure and the pinned structure. The magnetic structure is spaced apart from the spin Hall effect structure such that a magnetic field generated by the magnetic structure is moved relative to the spin Hall effect structure during acceleration. The processing circuitry is configured to generate electrical current through the spin Hall effect structure, measure a resistance at the MTJ element, and determine acceleration based on the resistance at the MTJ element.