Invention Grant
- Patent Title: Profile aware source-mask optimization
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Application No.: US15023330Application Date: 2014-09-11
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Publication No.: US11054750B2Publication Date: 2021-07-06
- Inventor: Duan-Fu Stephen Hsu , Rafael C. Howell , Feng-Liang Liu
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- International Application: PCT/EP2014/069396 WO 20140911
- International Announcement: WO2015/049099 WO 20150409
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illuminator and projection optics, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.
Public/Granted literature
- US20160231654A1 PROFILE AWARE SOURCE-MASK OPTIMIZATION Public/Granted day:2016-08-11
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