Invention Grant
- Patent Title: Channel-scope proximity disturb and defect remapping scheme for non-volatile memory
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Application No.: US15979206Application Date: 2018-05-14
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Publication No.: US11055167B2Publication Date: 2021-07-06
- Inventor: Samuel E. Bradshaw , Justin Eno
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Nicholson De Vos Webster & Elliott LLP
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/07 ; G06F3/06

Abstract:
Techniques for remapping portions of a plurality of non-volatile memory (NVM) dice forming a memory domain. A processing device partitions each NVM die into subslice elements comprising respective physical portions of NVM having proximal disturb relationships. The NVM allocation has user subslice elements and spare subslice elements. For the NVM dice forming the memory domain, the processing device performs an error analysis to identify a predetermined number of subslice elements having highest error rates for the memory domain. Identified user subslice elements having the highest error rates, remap to spare subslice elements of the memory domain that were not identified as having the highest error rates to remove subslice element or elements having highest error rates. At least one user subslice element is remapped from a first die of the memory domain to a second die of the memory domain.
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