Invention Grant
- Patent Title: Structural enhancement of Cu nanowires
-
Application No.: US16238214Application Date: 2019-01-02
-
Publication No.: US11056425B2Publication Date: 2021-07-06
- Inventor: Daniel C. Edelstein , Chih-Chao Yang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Sherman IP LLP
- Agent Kenneth L. Sherman; Steven Laut
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/522 ; H01L21/768

Abstract:
A structure comprising a first dielectric layer embedded with a first interconnect structure. An insulator layer is disposed on the first dielectric layer. A second dielectric layer is disposed on the insulator layer. A via resides within the second dielectric layer. A second interconnect structure is isolated from the first dielectric layer. A first portion of a bottom surface of the via resides on a top surface of the insulator layer. A second portion of the bottom surface of the via resides on a first portion of a top surface of the first interconnect structure.
Public/Granted literature
- US20190157202A1 STRUCTURAL ENHANCEMENT OF CU NANOWIRES Public/Granted day:2019-05-23
Information query
IPC分类: