Invention Grant
- Patent Title: Method of forming a TVS semiconductor device
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Application No.: US16704365Application Date: 2019-12-05
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Publication No.: US11056480B2Publication Date: 2021-07-06
- Inventor: Yupeng Chen , Steven M. Etter , Umesh Sharma
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/06 ; H01L29/732 ; H01L29/861 ; H01L29/08 ; H01L23/535 ; H01L29/66 ; H01L29/06 ; H01L29/10
Abstract:
In one embodiment, a TVS semiconductor device includes a P-N diode that is connected in parallel with a bipolar transistor wherein a breakdown voltage of the bipolar transistor is less than a breakdown voltage of the P-N diode.
Information query
IPC分类:
